| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 300 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 65.0 V |
| Current Rating | 100 mA |
| Case/Package | TO-226-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 625 mW |
| Breakdown Voltage (Collector to Emitter) | 65 V |
| Continuous Collector Current | 0.1A |
| hFE Min | 200 @2mA, 5V |
| Input Power (Max) | 625 mW |
| DC Current Gain (hFE) | 290 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BC546BZL1G from On Semiconductor is a through hole, NPN amplifier transistor in TO-92 package.
● Collector to emitter voltage (Vce) of 65V
● Collector current (Ic) of 100mA
● Power dissipation of 625mW
● Operating junction temperature range from -55°C to 150°C
● Collector emitter breakdown Voltage of 65V
● Collector emitter saturation voltage of 600mV at 10mA collector current
ON Semiconductor
6 Pages / 0.1 MByte
ON Semiconductor
9 Pages / 0.19 MByte
ON Semiconductor
1 Pages / 0.01 MByte
ON Semiconductor
1 Pages / 0.07 MByte
Motorola
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
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