| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 320 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -45.0 V |
| Current Rating | -100 mA |
| Case/Package | TO-226-3 |
| Polarity | PNP |
| Power Dissipation | 0.625 W |
| Breakdown Voltage (Collector to Emitter) | 45 V |
| Continuous Collector Current | 0.1A |
| hFE Min | 180 @2mA, 5V |
| Input Power (Max) | 625 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Box |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the PNP BC557BG general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. This product comes packaged in bulk, so the parts will be stored loosely. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
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