| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 320 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -45.0 V |
| Current Rating | -100 mA |
| Case/Package | TO-226-3 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 625 mW |
| Breakdown Voltage (Collector to Emitter) | 45 V |
| Continuous Collector Current | 0.1A |
| hFE Min | 180 @2mA, 5V |
| Input Power (Max) | 625 mW |
| DC Current Gain (hFE) | 180 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -50 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This specially engineered PNP BC557BRL1G GP BJT from ON Semiconductor comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
ON Semiconductor
7 Pages / 0.07 MByte
ON Semiconductor
16 Pages / 0.08 MByte
ON Semiconductor
1 Pages / 0.07 MByte
Motorola
100mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
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