TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 320 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -45.0 V |
Current Rating | -100 mA |
Case/Package | TO-92-3 |
Number of Positions | 3 Position |
Polarity | PNP, P-Channel |
Power Dissipation | 1.5 W |
Breakdown Voltage (Collector to Emitter) | 45 V |
Continuous Collector Current | 0.1A |
hFE Min | 420 @2mA, 5V |
Input Power (Max) | 625 mW |
DC Current Gain (hFE) | 420 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Material | Silicon |
Size-Length | 5.2 mm |
Size-Width | 4.19 mm |
Size-Height | 5.33 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BC557CG is a PNP silicon Bipolar Transistor. It is designed for use in linear and switching applications.
● 200°C/W Junction-to-ambient thermal resistance
● 83.3°C/W Junction-to-case thermal resistance
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