| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 150 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-226-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 500 mW |
| Breakdown Voltage (Collector to Emitter) | 45 V |
| hFE Min | 420 @2mA, 5V |
| Input Power (Max) | 500 mW |
| DC Current Gain (hFE) | 420 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Material | Silicon |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | 150℃ (TJ) |
The BC560CTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications.
● Low noise
● Complement to BC550
ON Semiconductor
10 Pages / 0.32 MByte
ON Semiconductor
10 Pages / 0.82 MByte
ON Semiconductor
1 Pages / 0.13 MByte
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