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BC639RL1G
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BC639RL1G Datasheet PDF - ON Semiconductor

Manufacturer:ON Semiconductor
Category:BJTs
Case Package:TO-226-3
Description:TO-92 NPN 80V 1A
Documentation:BC639RL1G Datasheet (4 Pages)Package Outline Dimension on4 Page
Part Numbering System on1 Page2 Page4 Page
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BC639RL1G Datasheet PDF (4 Pages)
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BC639RL1G Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Frequency200 MHz
Number of Pins3 Pin
Voltage Rating (DC)80.0 V
Current Rating1.00 A
Case/PackageTO-226-3
Number of Positions3 Position
PolarityNPN
Power Dissipation800 mW
Breakdown Voltage (Collector to Emitter)80 V
Continuous Collector Current1A
hFE Min40 @150mA, 2V
Input Power (Max)625 mW
DC Current Gain (hFE)40
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)625 mW
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BC639RL1G Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
MaterialSilicon
Size-Length5.2 mm
Size-Width4.19 mm
Size-Height5.33 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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BC639RL1G Documents

BC639RL1G Datasheet
ON Semiconductor
4 Pages / 0.09 MByte
BC639RL1G Other Datasheet PDF
ON Semiconductor
9 Pages / 0.19 MByte
BC639RL1G Notice File
ON Semiconductor
1 Pages / 0.07 MByte

BC639RL1 Documents

BC639RL1 Datasheet PDF
ON Semiconductor
TO-92 NPN 80V 1A
BC639RL1G Datasheet PDF
ON Semiconductor
TO-92 NPN 80V 1A
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