TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 100 MHz |
Number of Pins | 3 Pin |
Case/Package | SOT-23-3 |
Halogen Free Status | Halogen Free |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 225 mW |
Breakdown Voltage (Collector to Emitter) | 45 V |
Continuous Collector Current | 0.5A |
hFE Min | 250 @100mA, 1V |
Input Power (Max) | 300 mW |
DC Current Gain (hFE) | 40 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 300 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Width | 1.3 mm |
Operating Temperature | -65℃ ~ 150℃ (TJ) |
Jump-start your electronic circuit design with this versatile NPN BC817-40LT3G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
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