| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 100 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 65.0 V |
| Current Rating | 100 mA |
| Case/Package | SOT-23-3 |
| Power Rating | 300 mW |
| Halogen Free Status | Halogen Free |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 300 mW |
| Gain Bandwidth Product | 100 MHz |
| Breakdown Voltage (Collector to Emitter) | 65 V |
| Continuous Collector Current | 0.1A |
| hFE Min | 200 @2mA, 5V |
| hFE Max | 450 |
| Input Power (Max) | 225 mW |
| DC Current Gain (hFE) | 200 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.94 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The BC846BLT1G is a NPN silicon general purpose Bipolar Transistor, designed for use in linear and switching applications. Ideal for lower power surface mount applications.
● Inductive load protection
● Steering logic
● Polarity reversal protection
● ESD rating - Human body model of >4000V
● ESD rating - Machine model of >400V
●ESD sensitive device, take proper precaution while handling the device.
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Leshan Radio
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3
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