| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 100 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 100 mA |
| Case/Package | SOT-23-3 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 225 mW |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| Continuous Collector Current | 0.1A |
| hFE Min | 110 @2mA, 5V |
| Input Power (Max) | 300 mW |
| DC Current Gain (hFE) | 110 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 3.04 mm |
| Size-Width | 2.64 mm |
| Size-Height | 1.11 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This specially engineered NPN BC848ALT1G GP BJT from ON Semiconductor comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.
ON Semiconductor
13 Pages / 0.1 MByte
ON Semiconductor
22 Pages / 1.31 MByte
ON Semiconductor
8 Pages / 0.09 MByte
ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
1 Pages / 0.13 MByte
Leshan Radio
General Purpose Transistors(NPN Silicon)
Jiangsu Changjiang Electronics Technology
Leshan Radio
Small Signal Bipolar Transistor,
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
