TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 100 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 45.0 V |
Current Rating | 100 mA |
Case/Package | SOT-23-3 |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 225 mW |
Breakdown Voltage (Collector to Emitter) | 45 V |
Continuous Collector Current | 0.1A |
hFE Min | 420 @2mA, 5V |
Input Power (Max) | 225 mW |
DC Current Gain (hFE) | 420 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 300 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 2.9 mm |
Size-Width | 1.3 mm |
Size-Height | 0.94 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BC850CLT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications.
● Moisture sensitivity level-1
● AEC-Q101 qualified and PPAP capable
● >4000V Human body model and >400V machine model - ESD rating
ON Semiconductor
13 Pages / 0.16 MByte
ON Semiconductor
14 Pages / 0.16 MByte
ON Semiconductor
8 Pages / 0.09 MByte
ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
1 Pages / 0.13 MByte
Leshan Radio
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3
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