TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 150 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -65.0 V |
Current Rating | -100 mA |
Case/Package | SOT-23-3 |
Number of Positions | 3 Position |
Polarity | PNP |
Power Dissipation | 310 mW |
Breakdown Voltage (Collector to Emitter) | 65 V |
Continuous Collector Current | 0.1A |
hFE Min | 420 @2mA, 5V |
Input Power (Max) | 310 mW |
DC Current Gain (hFE) | 420 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 310 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2.9 mm |
Size-Width | 1.3 mm |
Size-Height | 0.93 mm |
Operating Temperature | 150℃ (TJ) |
The BC856CMTF is a PNP epitaxial silicon Bipolar Transistor suitable for automatic insertion in thick and thin-film circuits, switching and amplifier applications.
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