TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 100 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -45.0 V |
Current Rating | -100 mA |
Case/Package | SOT-23-3 |
Number of Positions | 3 Position |
Polarity | PNP |
Power Dissipation | 225 mW |
Gain Bandwidth Product | 100 MHz |
Breakdown Voltage (Collector to Emitter) | 45 V |
Continuous Collector Current | 0.1A |
hFE Min | 125 @2mA, 5V |
Input Power (Max) | 225 mW |
DC Current Gain (hFE) | 90 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -50 ℃ |
Power Dissipation (Max) | 300 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 3.04 mm |
Size-Width | 1.4 mm |
Size-Height | 1.11 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
●Small Signal PNP Transistors, ON Semiconductor
●These ON Semiconductor Bipolar transistors can amplify analog or digital signals. They can also switch DC or function as an oscillator.
ON Semiconductor
7 Pages / 0.08 MByte
ON Semiconductor
14 Pages / 0.05 MByte
ON Semiconductor
6 Pages / 0.17 MByte
Motorola
CASE 318-08, STYLE 6 SOT-23 (TO-236AB)
Leshan Radio
PNP Silicon General Purpose Transistors
Micro Commercial Components
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
Jiangsu Changjiang Electronics Technology
Leshan Radio
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-3
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