| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SOT-363 |
| Number of Positions | 6 Position |
| Polarity | PNP |
| Power Dissipation | 300 mW |
| Breakdown Voltage (Collector to Emitter) | 65 V |
| Continuous Collector Current | 0.1A |
| hFE Min | 200 |
| DC Current Gain (hFE) | 290 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Cut Tape (CT) |
| Size-Length | 3 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1.1 mm |
The BCM856BS is a dual PNP matched double Bipolar Transistor Array in a small surface-mount plastic package. The transistor is fully isolated internally and suitable for current mirror and differential amplifier.
● Current gain matching
● Base-emitter voltage matching
● Drop-in replacement for standard double transistors
Nexperia
TRANS 2PNP 65V 0.1A 6TSSOP
Nexperia
TRANS 2PNP 65V 0.1A 6TSSOP
Nexperia
TRANS 2PNP 65V 0.1A 6TSOP
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