| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 130 MHz |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 80.0 V |
| Current Rating | 1.00 A |
| Case/Package | TO-261-4 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 1.5 W |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| Continuous Collector Current | 1A |
| hFE Min | 40 @150mA, 2V |
| Input Power (Max) | 1.5 W |
| DC Current Gain (hFE) | 250 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1.5 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.5 mm |
| Size-Width | 3.5 mm |
| Size-Height | 1.57 mm |
| Operating Temperature | -65℃ ~ 150℃ |
The BCP56T1G is a NPN bipolar Silicon Epitaxial Transistor designed for use in audio amplifier applications. The device is housed in the package which is designed for medium power surface-mount applications. This package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die.
● Halogen-free
● AEC-Q101 qualified and PPAP capable
● PNP complement is BCP53T1
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