| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -1.00 A |
| Case/Package | TO-261-4 |
| Polarity | PNP |
| Power Dissipation | 1.5 W |
| Gain Bandwidth Product | 60 MHz |
| Breakdown Voltage (Collector to Emitter) | 20 V |
| Continuous Collector Current | 1A |
| hFE Min | 85 @500mA, 1V |
| Input Power (Max) | 1.5 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 65 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.5 mm |
| Size-Width | 3.5 mm |
| Size-Height | 1.57 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT
●This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications.
●Features
●•High Current: IC= −1.0 A
●•The SOT−223 Package can be soldered using wave or reflow.
●•SOT−223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die.
●•NPN Complement is BCP68
ON Semiconductor
4 Pages / 0.09 MByte
ON Semiconductor
36 Pages / 0.15 MByte
ON Semiconductor
4 Pages / 0.09 MByte
ON Semiconductor
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