| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 50.0 V |
| Current Rating | 100 mA |
| Case/Package | SOT-23-3 |
| Polarity | NPN |
| Power Dissipation | 0.2 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| hFE Min | 70 @5mA, 5V |
| Input Power (Max) | 200 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Gain Bandwidth | 170 MHz |
| Power Dissipation (Max) | 200 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.9 mm |
Summary of Features:
● Switching circuit, inverter, interface circuit, driver circuit
● Built in bias resistor (R1=2.2 kΩ, R2=47 kΩ)
● BCR108S: Two internally isolated transistors with good matching in one multichip package
● BCR108S: For orientation in reel see package information below
● Pb-free (RoHS compliant) package
● Qualified according AEC Q101
Infineon
11 Pages / 0.84 MByte
Infineon
34 Pages / 0.2 MByte
Infineon
1 Pages / 0.13 MByte
Infineon
Trans Digital BJT NPN 50V 100mA 3Pin SOT-23 T/R
Infineon
NPN DIGI-TRANS.2,2K/47K SOT23 **
Siemens Semiconductor
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
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