| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 50.0 V |
| Current Rating | 100 mA |
| Case/Package | SOT-23-3 |
| Polarity | NPN |
| Power Dissipation | 0.2 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| hFE Min | 70 @5mA, 5V |
| Input Power (Max) | 200 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Gain Bandwidth | 170 MHz |
| Power Dissipation (Max) | 200 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | End of Life |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -65℃ ~ 150℃ |
Do you need a device that can offer the benefits of traditional BJTs with the compatibility for digital signal processors? The NPN BCR108E6433HTMA1 digital transistor from Infineon Technologies is your solution. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 200 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It is made in a single configuration.
Infineon
11 Pages / 0.84 MByte
Infineon
34 Pages / 0.51 MByte
Infineon
Trans Digital BJT NPN 50V 100mA Automotive 3Pin SOT-23 T/R
Siemens Semiconductor
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