| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-323-3 |
| Polarity | NPN |
| Power Dissipation | 0.25 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| hFE Min | 70 @5mA, 5V |
| Input Power (Max) | 250 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Gain Bandwidth | 170 MHz |
| Power Dissipation (Max) | 250 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Last Time Buy |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -65℃ ~ 150℃ |
The NPN BCR108WH6327XTSA1 digital transistor from Infineon Technologies is your alternative to traditional BJTs in that it can provide digital signal processing power. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 250 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a single configuration. This transistor has an operating temperature range of -65 °C to 150 °C.
Infineon
12 Pages / 0.2 MByte
Infineon
34 Pages / 0.51 MByte
Infineon
TRANS NPN DGTL 50V 100mA SOT323
Infineon
NPN DIGI-TRANS.2,2K/47K SOT323 **
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
