TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Case/Package | SOT-363-6 |
Polarity | NPN |
Breakdown Voltage (Collector to Emitter) | 50 V |
Continuous Collector Current | 100mA |
Power Dissipation (Max) | 250 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | End of Life |
Packaging | Tape & Reel (TR) |
Features •NPN Silicon Digital Transistor •Switching circuit, inverter, interface circuit,driver circuit •Built in bias resistor (R1=4.7k , R2=4.7k ) •For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
Infineon
11 Pages / 0.84 MByte
Infineon
10 Pages / 0.48 MByte
Siemens Semiconductor
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
TT Electronics/BI
RESISTOR, METAL GLAZE/THICK FILM, 0.063W, 1%, 200ppm, 1000ohm, SURFACE MOUNT, 0603, CHIP
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