| TYPE | DESCRIPTION |
|---|
| Case/Package | SOT-363 |
| Polarity | NPN |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | End of Life |
Features •NPN Silicon Digital Transistor •Switching circuit, inverter, interface circuit,driver circuit •Built in bias resistor (R1=4.7k ) •For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
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NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
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RESISTOR, METAL GLAZE/THICK FILM, 1W, 1%, 100ppm, 191ohm, SURFACE MOUNT, 2512, CHIP
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