TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 50.0 V |
Current Rating | 100 mA |
Case/Package | SOT-23-3 |
Polarity | NPN |
Power Dissipation | 0.2 W |
Breakdown Voltage (Collector to Emitter) | 50 V |
Continuous Collector Current | 100mA |
hFE Min | 30 @5mA, 5V |
Input Power (Max) | 200 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Gain Bandwidth | 130 MHz |
Power Dissipation (Max) | 200 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | End of Life |
Packaging | Tape & Reel (TR) |
Size-Length | 2.9 mm |
Size-Width | 1.3 mm |
Size-Height | 0.9 mm |
Operating Temperature | -65℃ ~ 150℃ |
If you are building a digital signal processing device, make sure to use Infineon Technologies" NPN BCR133E6433HTMA1 digital transistor"s within your circuit! This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 30@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 200 mW. It has a maximum collector emitter voltage of 50 V. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It is made in a single configuration.
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