| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-323-3 |
| Polarity | NPN |
| Power Dissipation | 0.25 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| hFE Min | 30 @5mA, 5V |
| Input Power (Max) | 250 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Gain Bandwidth | 130 MHz |
| Power Dissipation (Max) | 250 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2 mm |
| Size-Width | 1.25 mm |
| Size-Height | 0.8 mm |
| Operating Temperature | -65℃ ~ 150℃ |
If you are building a digital signal processing device, make sure to use Infineon Technologies" NPN BCR133WH6327XTSA1 digital transistor"s within your circuit! This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 30@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 250 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a single configuration. This transistor has an operating temperature range of -65 °C to 150 °C.
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