| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-323-3 |
| Polarity | NPN |
| Power Dissipation | 0.25 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| hFE Min | 70 @5mA, 5V |
| Input Power (Max) | 250 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Gain Bandwidth | 150 MHz |
| Power Dissipation (Max) | 250 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2 mm |
| Size-Width | 1.25 mm |
| Size-Height | 0.8 mm |
| Operating Temperature | -65℃ ~ 150℃ |
Ensure the proper transistor is used within your digital processing unit by using Infineon Technologies" NPN BCR135WH6327XTSA1 digital transistor. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 250 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It is made in a single configuration. This transistor has an operating temperature range of -65 °C to 150 °C.
Infineon
11 Pages / 0.84 MByte
Infineon
11 Pages / 0.84 MByte
Infineon
Trans Digital BJT NPN 50V 100mA 3Pin SOT-323 T/R
Infineon
NPN DIGI-TRANS.10K/47K SOT323 **
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