| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-323-3 |
| Polarity | NPN |
| Power Dissipation | 0.25 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| hFE Min | 50 @5mA, 5V |
| Input Power (Max) | 250 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Gain Bandwidth | 130 MHz |
| Power Dissipation (Max) | 250 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2 mm |
| Size-Width | 1.25 mm |
| Size-Height | 0.8 mm |
Compared to traditional BJ transistors, the NPN BCR141WH6327XTSA1 digital transistor from Infineon Technologies is meant to be used with digital signal processing circuits. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 50@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 250 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has an operating temperature range of -65 °C to 150 °C. It is made in a single configuration.
Infineon
11 Pages / 0.84 MByte
Infineon
13 Pages / 0.15 MByte
Infineon
NPN DIGITALTRANS.22K/22K SOT323 **
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