TYPE | DESCRIPTION |
---|
Frequency | 100 MHz |
Case/Package | SOT-323-3 |
Polarity | NPN |
Power Dissipation | 250 mW |
Breakdown Voltage (Collector to Emitter) | 50 V |
Continuous Collector Current | 100mA |
Power Dissipation (Max) | 250 mW |
TYPE | DESCRIPTION |
---|
Packaging | Tape & Reel (TR) |
Infineon
11 Pages / 0.84 MByte
Siemens Semiconductor
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
TT Electronics/BI
RESISTOR, METAL GLAZE/THICK FILM, 1W, 1%, 100ppm, 4870ohm, SURFACE MOUNT, 2512, CHIP
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