| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -50.0 V |
| Current Rating | -70.0 mA |
| Case/Package | SOT-23-3 |
| Polarity | PNP |
| Power Dissipation | 0.2 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| hFE Min | 70 @5mA, 5V |
| Input Power (Max) | 200 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Gain Bandwidth | 190 MHz |
| Power Dissipation (Max) | 200 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.9 mm |
Summary of Features:
● Switching circuit, inverter, interface circuit, driver circuit
● Built in bias resistor (R1 = 47 kΩ , R2 = 47 kΩ )
● BCR198S: Two internally isolated transistors with good matching in one multichip package
● BCR198S: For orientation in reel see package information below
● Pb-free (RoHS compliant) package
● Qualified according AEC Q101
Infineon
11 Pages / 0.84 MByte
Infineon
34 Pages / 0.2 MByte
Infineon
10 Pages / 0.48 MByte
Infineon
Trans Digital BJT PNP 50V 100mA 3Pin SOT-23 T/R
Infineon
PNP DIGIT-TR.47K/47K 50V SOT23 **
Siemens Semiconductor
Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
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