TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 50.0 V |
Current Rating | 500 mA |
Case/Package | SOT-23-3 |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 330 mW |
Breakdown Voltage (Collector to Emitter) | 50 V |
Continuous Collector Current | 500mA |
hFE Min | 70 @50mA, 5V |
Input Power (Max) | 330 mW |
DC Current Gain (hFE) | 70 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Gain Bandwidth | 100 MHz |
Power Dissipation (Max) | 330 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tape & Reel (TR) |
Size-Length | 2.9 mm |
Size-Width | 1.3 mm |
Size-Height | 0.9 mm |
The BCR 523 E6327 is a NPN silicon digital Bipolar Transistor suitable for switching circuit, inverter and interface circuit driver circuit applications.
● Built-in bias resistor (R1 = 1kR, R2 = 10kR)
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