| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-89 |
| Polarity | NPN |
| Power Dissipation | 1000 mW |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 0.5A |
| hFE Min | 10000 @100mA, 5V |
| Input Power (Max) | 1 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Gain Bandwidth | 150 MHz |
| Power Dissipation (Max) | 1000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tape & Reel (TR) |
| Size-Height | 1.5 mm |
| Operating Temperature | 150℃ (TJ) |
Traditional transistors can produce low current gains. One of Infineon Technologies" NPN BCV49E6327HTSA1 Darlington transistors can provide you with the much higher values you need. This Darlington transistor array"s maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 1.5@0.1mA@100mA V. This product"s maximum continuous DC collector current is 0.5 A, while its minimum DC current gain is 10000@100mA@5V|2000@100uA@1 V|2000@500mA@5V|4000@10mA@5V. It has a maximum collector emitter saturation voltage of 1@0.1mA@100mA V. Its maximum power dissipation is 1000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 10 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.
Infineon
7 Pages / 0.5 MByte
Infineon
7 Pages / 0.05 MByte
Infineon
Darlington Transistors NPN Silicn Darlingtn TRANSISTOR
Siemens Semiconductor
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
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