| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-89-3 |
| Polarity | NPN |
| Power Dissipation | 1 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 0.5A |
| hFE Min | 10000 @100mA, 5V |
| Input Power (Max) | 1 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Gain Bandwidth | 150 MHz |
| Power Dissipation (Max) | 1000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.5 mm |
| Size-Width | 2.5 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -65℃ ~ 150℃ |
If you require a higher current gain value in your circuit, then the NPN BCV49H6327XTSA1 Darlington transistor, developed by Infineon Technologies, is for you. This Darlington transistor array"s maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 1.5@0.1mA@100mA V. This product"s maximum continuous DC collector current is 0.5 A, while its minimum DC current gain is 10000@100mA@5V|2000@100uA@1 V|2000@500mA@5V|4000@10mA@5V. It has a maximum collector emitter saturation voltage of 1@0.1mA@100mA V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 10 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.
Infineon
7 Pages / 0.5 MByte
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GP Darlington BJT NPN 60V 0.5A SOT89
Infineon
NPN DARLINGTON 60V 0,5A SOT89 **
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