TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 200 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -32.0 V |
Current Rating | -800 mA |
Case/Package | SOT-23-3 |
Polarity | PNP |
Power Dissipation | 0.33 W |
Breakdown Voltage (Collector to Emitter) | 32 V |
Continuous Collector Current | 0.8A |
hFE Min | 160 @100mA, 1V |
Input Power (Max) | 330 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 330 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 2.9 mm |
Size-Width | 1.3 mm |
Size-Height | 0.9 mm |
Operating Temperature | 150℃ (TJ) |
Summary of Features:
● For general AF applications
● High current gain
● Low collector-emitter saturation voltage
● Complementary types: BCW66... (NPN)
● Pb-free (RoHS compliant) package
● Qualified according AEC Q101
Infineon
8 Pages / 0.51 MByte
Infineon
34 Pages / 0.2 MByte
Infineon
TRANS PNP 32V 0.8A SOT-23
Infineon
Trans GP BJT PNP 32V 0.8A 3Pin SOT-23 T/R
Siemens Semiconductor
Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon
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