| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 100 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 125 V |
| Current Rating | 800 mA |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 330 mW |
| Breakdown Voltage (Collector to Emitter) | 125 V |
| Continuous Collector Current | 0.8A |
| hFE Min | 40 @200mA, 1V |
| Input Power (Max) | 330 mW |
| DC Current Gain (hFE) | 25 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 330 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.9 mm |
| Operating Temperature | 150℃ (TJ) |
The BCX 41 E6327 is a NPN silicon AF and switching Bipolar Transistor suitable for general AF applications.
● High breakdown voltage
● Low collector-emitter saturation voltage
● BCX42 (PNP) Complementary type
Infineon
7 Pages / 0.51 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
34 Pages / 0.2 MByte
Infineon
34 Pages / 0.66 MByte
Infineon
Trans GP BJT NPN 125V 0.8A 3Pin SOT-23 T/R
Siemens Semiconductor
Small Signal Bipolar Transistor, 0.8A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon
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