TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -125 V |
Current Rating | -800 mA |
Case/Package | SOT-23-3 |
Polarity | PNP |
Power Dissipation | 330 mW |
Breakdown Voltage (Collector to Emitter) | 125 V |
Continuous Collector Current | 0.8A |
hFE Min | 40 @200mA, 1V |
Input Power (Max) | 330 mW |
DC Current Gain (hFE) | 25 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 330 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 2.9 mm |
Size-Width | 1.3 mm |
Size-Height | 0.9 mm |
Operating Temperature | 150℃ (TJ) |
The BCX 42 E6327 is a PNP silicon AF and Switching Transistor suitable for general AF applications.
● High breakdown voltage
● Low collector-emitter saturation voltage
● Complementary to BCX41 (NPN)
Infineon
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Trans GP BJT PNP 125V 0.8A Automotive 3Pin SOT-23 T/R
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PNP TRANSISTOR 125V 0,8A SOT23 **
Siemens Semiconductor
Small Signal Bipolar Transistor, 0.8A I(C), 125V V(BR)CEO, 1-Element, PNP, Silicon
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