| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 50 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-126-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 1.25 W |
| Breakdown Voltage (Collector to Emitter) | 45 V |
| hFE Min | 40 @150mA, 2V |
| hFE Max | 250 |
| Input Power (Max) | 1.25 W |
| DC Current Gain (hFE) | 250 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1250 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 7.8 mm |
| Size-Width | 2.7 mm |
| Size-Height | 10.8 mm |
| Operating Temperature | 150℃ (TJ) |
The BD135 is a NPN low voltage Transistor built in epitaxial planar technology. Designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits.
● Complement to BD136
● 0.5A Base current
● 10°C/W Junction-to-case thermal resistance
● 100°C/W Junction-to-ambient thermal resistance
ST Microelectronics
9 Pages / 0.14 MByte
ST Microelectronics
4 Pages / 0.05 MByte
ST Microelectronics
5 Pages / 0.04 MByte
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