| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -45.0 V |
| Current Rating | -1.50 A |
| Case/Package | TO-126-3 |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 1.25 W |
| Breakdown Voltage (Collector to Emitter) | 45 V |
| Thermal Resistance | 10℃/W (RθJC) |
| Continuous Collector Current | 1.5A |
| hFE Min | 40 @150mA, 2V |
| Input Power (Max) | 1.25 W |
| DC Current Gain (hFE) | 25 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1250 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 7.8 mm |
| Size-Width | 2.66 mm |
| Size-Height | 11.04 mm |
| Operating Temperature | -55℃ ~ 150℃ |
Implement this versatile PNP BD136G GP BJT from ON Semiconductor into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1250 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
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