| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 50 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 80.0 V |
| Current Rating | 1.50 A |
| Case/Package | TO-126-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 1.25 W |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| hFE Min | 40 @150mA, 2V |
| hFE Max | 250 |
| Input Power (Max) | 1.25 W |
| DC Current Gain (hFE) | 250 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1250 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 7.8 mm |
| Size-Width | 2.7 mm |
| Size-Height | 10.8 mm |
| Operating Temperature | 150℃ (TJ) |
The BD139 from STMicroelectronics is a through hole NPN complementary low voltage transistor in TO-126 (SOT-32) package. This device manufactured in epitaxial planar technology. Used for audio amplifiers and drivers, utilizing complementary or quasi complementary circuits.
● Collector to emitter voltage (Vce) is 80V
● Collector current (Ic) is 1.5A
● Power dissipation (Pd) is 12.5W
● Collector to emitter saturation voltage of 500mV at 0.5A collector current
● DC current gain (hFE) of 25 at 0.5A collector current
● Operating junction temperature range from 150°C
ST Microelectronics
4 Pages / 0.07 MByte
ST Microelectronics
1 Pages / 0.28 MByte
ST Microelectronics
4 Pages / 0.07 MByte
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