| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 80.0 V |
| Current Rating | 1.50 A |
| Case/Package | TO-126-3 |
| Power Rating | 12.5 W |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 1.25 W |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| Continuous Collector Current | 1.5A |
| hFE Min | 100 @150mA, 2V |
| Input Power (Max) | 1.25 W |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1250 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail |
| Material | Silicon |
| Size-Length | 8 mm |
| Size-Width | 3.25 mm |
| Size-Height | 11 mm |
| Operating Temperature | 150℃ (TJ) |
The BD13916STU is a 80V NPN Epitaxial Silicon Transistor for medium power linear and switching applications. It is complement to BD140 transistor. This product is general usage and suitable for many different applications.
● 80V Collector to base voltage (VCBO)
● 5V Emitter to base voltage (VEBO)
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