| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | TO-126-3 |
| Power Dissipation | 20 W |
| Breakdown Voltage (Collector to Emitter) | 350 V |
| hFE Min | 30 @50mA, 10V |
| Input Power (Max) | 20 W |
| Operating Temperature (Max) | 50 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 20000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Material | Silicon |
Bipolar (BJT) Transistor NPN 350V 500mA 20W Through Hole TO-126-3
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