TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 60.0 V |
Current Rating | 3.00 A |
Case/Package | TO-220-3 |
Power Dissipation | 40 W |
Breakdown Voltage (Collector to Emitter) | 60 V |
hFE Min | 25 @1A, 4V |
Input Power (Max) | 40 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 40000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 9.15 mm |
Operating Temperature | 150℃ (TJ) |
Description
●The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
●Features
●■ This device is qualified for automotive application
●■ NPN transistor
●Applications
●■ Audio, general purpose switching and amplifier transistors.
ST Microelectronics
9 Pages / 0.24 MByte
ST Microelectronics
1 Pages / 0.14 MByte
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