| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 3 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 40 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| hFE Min | 10 @3A, 4V |
| hFE Max | 25 |
| Input Power (Max) | 40 W |
| DC Current Gain (hFE) | 25 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 40000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Width | 4.6 mm |
| Operating Temperature | 150℃ (TJ) |
The BD241C is a 100V Silicon NPN Complementary Power Transistor manufactured in planar technology with base island layout. The transistor shows exceptional high gain performance coupled with very low saturation voltage. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
● Well-controlled hFE parameter for increased reliability
● Collector-base voltage (Vcbo = 100V)
● Emitter-base voltage (Vcbo = 5V)
ST Microelectronics
9 Pages / 0.24 MByte
ST Microelectronics
20 Pages / 2.6 MByte
ST Microelectronics
6 Pages / 0.09 MByte
ST Microelectronics
30 Pages / 0.31 MByte
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