TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -80.0 V |
Current Rating | -6.00 A |
Case/Package | TO-220-3 |
Polarity | PNP |
Power Dissipation | 65 W |
Gain Bandwidth Product | 3 MHz |
Breakdown Voltage (Collector to Emitter) | 80 V |
Continuous Collector Current | 6A |
hFE Min | 30 |
Input Power (Max) | 65 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 65 ℃ |
Power Dissipation (Max) | 65000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tube |
Material | Silicon |
Size-Length | 10.28 mm |
Size-Width | 4.82 mm |
Size-Height | 9.28 mm |
Operating Temperature | -65℃ ~ 150℃ (TJ) |
Minimum Packing Quantity | 50 |
Complementary Silicon Plastic Power Transistors
●These devices are designed for use in general purpose amplifier and switching applications.
●Features
●• High Current Gain Bandwidth Product
●• These Devices are Pb−Free and are RoHS Compliant
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