| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 3 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -100 V |
| Current Rating | -6.00 A |
| Case/Package | TO-220-3 |
| Polarity | PNP |
| Power Dissipation | 65 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Continuous Collector Current | 6A |
| hFE Min | 15 @3A, 4V |
| Input Power (Max) | 65 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 65000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
Complementary Silicon Plastic Power Transistors
●These devices are designed for use in general purpose amplifier and switching applications.
●Features
●• High Current Gain Bandwidth Product
●• These Devices are Pb−Free and are RoHS Compliant
ON Semiconductor
6 Pages / 0.09 MByte
ON Semiconductor
20 Pages / 2.6 MByte
ON Semiconductor
6 Pages / 0.09 MByte
ON Semiconductor
1 Pages / 0.49 MByte
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