| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-126-3 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 36 W |
| Breakdown Voltage (Collector to Emitter) | 22 V |
| hFE Min | 40 @10mA, 5V |
| Input Power (Max) | 36 W |
| DC Current Gain (hFE) | 140 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 36000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Material | Silicon |
| Operating Temperature | 150℃ (TJ) |
DESCRIPTION
●The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. The BD433 is especially suitable for use in car-radio output stages. The complementary PNP types are BD434,
●BD436, and BD438 respectively.
●■ SGS-THOMSON PREFERRED SALESTYPES
●■ COMPLEMENTARY PNP - NPN DEVICES
ST Microelectronics
4 Pages / 0.04 MByte
ST Microelectronics
6 Pages / 0.01 MByte
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