TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 3 MHz |
Number of Pins | 3 Pin |
Case/Package | TO-126-3 |
Number of Positions | 3 Position |
Polarity | PNP |
Power Dissipation | 36 W |
Breakdown Voltage (Collector to Emitter) | 32 V |
hFE Min | 40 @10mA, 5V |
Input Power (Max) | 36 W |
DC Current Gain (hFE) | 140 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 36000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Rail, Tube |
Material | Silicon |
Operating Temperature | 150℃ (TJ) |
DESCRIPTION
●The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. The BD433 is especially suitable for use in car-radio output stages. The complementary PNP types are BD434,
●BD436, and BD438 respectively.
●■ SGS-THOMSON PREFERRED SALESTYPES
●■ COMPLEMENTARY PNP - NPN DEVICES
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