| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 3 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-126-3 |
| Power Rating | 36 W |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 36 W |
| Breakdown Voltage (Collector to Emitter) | 45 V |
| hFE Min | 30 @10mA, 5V |
| hFE Max | 130 |
| Input Power (Max) | 36 W |
| DC Current Gain (hFE) | 140 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 36000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 7.8 mm |
| Size-Width | 2.7 mm |
| Size-Height | 10.8 mm |
| Operating Temperature | 150℃ (TJ) |
The BD437 is a NPN silicon complementary epitaxial-base Power Transistor in a JEDEC plastic package. It is intended for use in medium power linear and switching applications.
● PNP complementary type is BD438
ST Microelectronics
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ST Microelectronics
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ST Microelectronics
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