| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 3 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 80.0 V |
| Current Rating | 4.00 A |
| Case/Package | TO-225-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 36 W |
| Gain Bandwidth Product | 3 MHz |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| Continuous Collector Current | 4A |
| hFE Min | 40 @500mA, 1V |
| Input Power (Max) | 36 W |
| DC Current Gain (hFE) | 15 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 36000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 7.74 mm |
| Size-Width | 2.66 mm |
| Size-Height | 11.04 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
4.0 AMPERES POWER TRANSISTORS NPN SILICON
●This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications.
●Features
●•Complementary Types are BD438 and BD442
●•These Devices are Pb−Free and are RoHS Compliant
ON Semiconductor
5 Pages / 0.07 MByte
ON Semiconductor
50 Pages / 0.83 MByte
ON Semiconductor
4 Pages / 0.07 MByte
ON Semiconductor
2 Pages / 0.16 MByte
ST Microelectronics
Trans GP BJT NPN 80V 4A 3Pin(3+Tab) SOT-32 Tube
Multicomp
MULTICOMP BD441 Bipolar (BJT) Single Transistor, NPN, 80V, 3MHz, 36W, 4A, 15 hFE
Fairchild
NPN Epitaxial Silicon Transistor
Central Semiconductor
Trans GP BJT NPN 80V 4A 3Pin(3+Tab) TO-126 Box
Continental Device
36W Switching NPN Plastic Leaded Transistor. 80V Vceo, 4A Ic, 15 hFE.
Motorola
Plastic Medium Power Silicon NPN Transistor
Samsung
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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