| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 45.0 V |
| Current Rating | 8.00 A |
| Case/Package | TO-220-3 |
| Polarity | NPN |
| Power Dissipation | 50 W |
| Breakdown Voltage (Collector to Emitter) | 45 V |
| Continuous Collector Current | 8A |
| hFE Min | 25 @2A, 2V |
| Input Power (Max) | 50 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | 150℃ (TJ) |
Description
●The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are BD534 and BD536.
●Features
●■ BD533, BD535, and BD537 are NPN transistors
ST Microelectronics
11 Pages / 0.34 MByte
ST Microelectronics
1 Pages / 0.15 MByte
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