| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -8.00 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 50 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 8A |
| hFE Min | 25 @2A, 2V |
| hFE Max | 40 |
| Input Power (Max) | 50 W |
| DC Current Gain (hFE) | 40 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 50000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | 150℃ (TJ) |
Description
●The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are BD534 and BD536.
●Features
●■ BD533, BD535, and BD537 are NPN transistors
ST Microelectronics
11 Pages / 0.34 MByte
ST Microelectronics
20 Pages / 2.6 MByte
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