| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -4.00 A |
| Case/Package | TO-126-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 40 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 750 @2A, 3V |
| Input Power (Max) | 40 W |
| DC Current Gain (hFE) | 750 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 40000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 7.8 mm |
| Size-Width | 2.7 mm |
| Size-Height | 10.8 mm |
| Operating Temperature | 150℃ (TJ) |
DESCRIPTION
●The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications The complementary PNP types are BD678, BD678A, BD680, BD680A and BD682 respectively.
ST Microelectronics
12 Pages / 0.36 MByte
ST Microelectronics
13 Pages / 0.35 MByte
ST Microelectronics
4 Pages / 0.07 MByte
ST Microelectronics
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