| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -80.0 V |
| Current Rating | -4.00 A |
| Case/Package | TO-126-3 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 40 W |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| Continuous Collector Current | 4A |
| hFE Min | 750 @2A, 3V |
| Input Power (Max) | 40 W |
| DC Current Gain (hFE) | 750 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 40000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BD680AG is a 4A PNP medium-power Darlington Transistor can be used as output device in complementary general-purpose amplifier applications.
● Monolithic construction
● Complementary with BD679
● Equivalent to MJE 702
ON Semiconductor
4 Pages / 0.1 MByte
ON Semiconductor
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ON Semiconductor
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ON Semiconductor
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40W Darlington PNP Plastic Leaded Transistor. 80V Vceo, 4A Ic, 750 hFE. Complementary BD679
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Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
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