| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 1.5 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -80.0 V |
| Current Rating | 10.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 90 W |
| Gain Bandwidth Product | 1.5 MHz |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| Continuous Collector Current | 10A |
| hFE Min | 15 @4A, 2V |
| Input Power (Max) | 90 W |
| DC Current Gain (hFE) | 15 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 90000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.53 mm |
| Size-Width | 4.83 mm |
| Size-Height | 15.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Plastic High Power Silicon Transistor
●These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.
●Features
●• DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc
●• Pb-Free Packages are Available
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